2008 Ph.D. degree, Electronic Science and Technology, Dept. of Electronic Engineering, Tsinghua University, Beijing, China.

2003 B.S. degree, Electronic Science and Technology, Dept. of Electronic Engineering, Tsinghua University.

2012-     Associate Professor, Electronic Engineering, Department of Electronic Engineering, Tsinghua University, Beijing, China.

2010-2012 Assistant Professor, Electronic Engineering, Department of Electronic Engineering, Tsinghua University, Beijing, China.

2008-2010 Post doctor, Electronic Engineering, Department of Electronic Engineering, Tsinghua University, Beijing, China.

[1] Publication Committee Member, The 5th International Conference on White LEDs and Solid State Lighting (WLED-5), 2014

[2] Technical Program Committee Member, Asia Communications and Photonics Conference (ACP), 2014

[3] Program Committee Member, The 16th Conference on Defects-Recognition, Imaging and Physics in Semiconductors (DRIP-XVI 2015)

My research interests are III-nitride semiconductor materials and devices. As the widegap semiconductors, III-nitrides have many advantages and also important applications, especially on energy efficient solid state lighting. My research topics include metal organic vapor phase epitaxy (MOVPE) of III-nitride materials, carrier dynamics in InGaN/GaN multi-quantum wells (MQWs), light-emitting diodes (LEDs) and device physics, growth and characterization of InGaN quantum dots (QDs), UV avalanche photodiodes (APD), and sensors based on AlGaN/GaN high electron mobility transistors (HEMTs). I lead the projects from the National Natural Science Foundation of China, the National Basic Research Program of China (“973” Project) and the High Technology Research and Development Program of China (“863” Project).

National Science & Technology Progress Award (second class), 2011